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Home > products > IGBT Power Module > NGTB10N60R2DT4G IGBT Power Module Transistors IGBTs Single

NGTB10N60R2DT4G IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
NGTB10N60R2DT4G
Manufacturer:
ON Semiconductor
Description:
IGBT 10A 600V DPAK
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Introduction

NGTB10N60R2DT4G Specifications

Part Status Active
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20A
Current - Collector Pulsed (Icm) 40A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 10A
Power - Max 72W
Switching Energy 412µJ (on), 140µJ (off)
Input Type Standard
Gate Charge 53nC
Td (on/off) @ 25°C 48ns/120ns
Test Condition 300V, 10A, 30 Ohm, 15V
Reverse Recovery Time (trr) 90ns
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NGTB10N60R2DT4G Packaging

Detection

NGTB10N60R2DT4G IGBT Power Module Transistors IGBTs SingleNGTB10N60R2DT4G IGBT Power Module Transistors IGBTs SingleNGTB10N60R2DT4G IGBT Power Module Transistors IGBTs SingleNGTB10N60R2DT4G IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
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