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Home > products > IGBT Power Module > IKD06N60RAATMA1 IGBT Power Module Transistors IGBTs Single

IKD06N60RAATMA1 IGBT Power Module Transistors IGBTs Single

Category:
IGBT Power Module
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IKD06N60RAATMA1
Manufacturer:
Infineon Technologies
Description:
IGBT 600V 12A 100W TO252
Category:
Transistors - IGBTs - Single
Family:
Transistors - IGBTs - Single
Series:
TrenchStop™
Introduction

IKD06N60RAATMA1 Specifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 12A
Current - Collector Pulsed (Icm) 18A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 6A
Power - Max 100W
Switching Energy 110µJ (on), 220µJ (off)
Input Type Standard
Gate Charge 48nC
Td (on/off) @ 25°C 12ns/127ns
Test Condition 400V, 6A, 23 Ohm, 15V
Reverse Recovery Time (trr) 68ns
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IKD06N60RAATMA1 Packaging

Detection

IKD06N60RAATMA1 IGBT Power Module Transistors IGBTs SingleIKD06N60RAATMA1 IGBT Power Module Transistors IGBTs SingleIKD06N60RAATMA1 IGBT Power Module Transistors IGBTs SingleIKD06N60RAATMA1 IGBT Power Module Transistors IGBTs Single

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Stock:
MOQ:
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