RW1E014SNT2R Field Effect Transistor Transistors FETs MOSFETs Single
Specifications
Part Number:
RW1E014SNT2R
Manufacturer:
Rohm Semiconductor
Description:
MOSFET N-CH 30V 1.4A WEMT6
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction
RW1E014SNT2R Specifications
Part Status | Active |
---|---|
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 1.4A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 4V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 10V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 240 mOhm @ 1.4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-WEMT |
Package / Case | SOT-563, SOT-666 |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
RW1E014SNT2R Packaging
Detection
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Stock:
MOQ:
Negotiable