SQ2303ES-T1_GE3 Field Effect Transistor Transistors FETs MOSFETs Single
Specifications
Part Number:
SQ2303ES-T1_GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET P-CHAN 30V SOT23
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
Automotive, AEC-Q101, TrenchFET®
Introduction
SQ2303ES-T1_GE3 Specifications
Part Status | Active |
---|---|
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.9W (Tc) |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 1.8A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236 (SOT-23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
SQ2303ES-T1_GE3 Packaging
Detection
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Stock:
MOQ:
Negotiable