SI2304DDS-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Single
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
SI2304DDS-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 30V 3.3A SOT23
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
TrenchFET®
Introduction
SI2304DDS-T1-GE3 Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta), 3.6A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta), 1.7W (Tc) |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 3.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SI2304DDS-T1-GE3 Packaging
Detection
Send RFQ
Stock:
MOQ:
Negotiable