TPH2R506PL,L1Q Field Effect Transistor Transistors FETs MOSFETs Single
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
TPH2R506PL,L1Q
Manufacturer:
Toshiba Semiconductor And Storage
Description:
X35 PB-F POWER MOSFET TRANSISTOR
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
U-MOSIX-H
Introduction
TPH2R506PL,L1Q Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 100A |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 5435pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 134W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 30A, 4.5V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance |
| Package / Case | 8-PowerVDFN |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
TPH2R506PL,L1Q Packaging
Detection
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Stock:
MOQ:
Negotiable