SI4427BDY-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Single
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
SI4427BDY-T1-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 30V 9.7A 8SOIC
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
TrenchFET®
Introduction
SI4427BDY-T1-GE3 Specifications
| Part Status | Active |
|---|---|
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 12.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SI4427BDY-T1-GE3 Packaging
Detection
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Stock:
MOQ:
Negotiable