SI7102DN-T1-E3 Field Effect Transistor Transistors FETs MOSFETs Single
Specifications
Part Number:
SI7102DN-T1-E3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 12V 35A PPAK 1212-8
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
TrenchFET®
Introduction
SI7102DN-T1-E3 Specifications
Part Status | Active |
---|---|
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 3720pF @ 6V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 15A, 4.5V |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® 1212-8 |
Package / Case | PowerPAK® 1212-8 |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
SI7102DN-T1-E3 Packaging
Detection
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Stock:
MOQ:
Negotiable