IPS65R1K4C6AKMA1 Field Effect Transistor Transistors FETs MOSFETs Single
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IPS65R1K4C6AKMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 3.2A TO-251
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
CoolMOS™
Introduction
IPS65R1K4C6AKMA1 Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 225pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
IPS65R1K4C6AKMA1 Packaging
Detection
Send RFQ
Stock:
MOQ:
Negotiable