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Home > products > Field Effect Transistor > IRFSL3607PBF Field Effect Transistor Transistors FETs MOSFETs Single

IRFSL3607PBF Field Effect Transistor Transistors FETs MOSFETs Single

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
IRFSL3607PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 75V 80A TO-262
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
HEXFET®
Introduction

IRFSL3607PBF Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3070pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Rds On (Max) @ Id, Vgs 9 mOhm @ 46A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRFSL3607PBF Packaging

Detection

IRFSL3607PBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFSL3607PBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFSL3607PBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFSL3607PBF Field Effect Transistor Transistors FETs MOSFETs Single

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