IRFSL3607PBF Field Effect Transistor Transistors FETs MOSFETs Single
Specifications
Part Number:
IRFSL3607PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 75V 80A TO-262
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
HEXFET®
Introduction
IRFSL3607PBF Specifications
Part Status | Active |
---|---|
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 75V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 84nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3070pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 140W (Tc) |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 46A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-262 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
IRFSL3607PBF Packaging
Detection
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Stock:
MOQ:
Negotiable