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Home > products > Field Effect Transistor > PSMN8R5-100PSQ Field Effect Transistor Transistors FETs MOSFETs Single

PSMN8R5-100PSQ Field Effect Transistor Transistors FETs MOSFETs Single

Category:
Field Effect Transistor
Price:
Negotiable
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Specifications
Part Number:
PSMN8R5-100PSQ
Manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 100V 100A TO-220
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction

PSMN8R5-100PSQ Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tj)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 111nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 5512pF @ 50V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 263W (Tc)
Rds On (Max) @ Id, Vgs 8.5 mOhm @ 25A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

PSMN8R5-100PSQ Packaging

Detection

PSMN8R5-100PSQ Field Effect Transistor Transistors FETs MOSFETs SinglePSMN8R5-100PSQ Field Effect Transistor Transistors FETs MOSFETs SinglePSMN8R5-100PSQ Field Effect Transistor Transistors FETs MOSFETs SinglePSMN8R5-100PSQ Field Effect Transistor Transistors FETs MOSFETs Single

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