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Home > Products > Field Effect Transistor > IRFSL4310ZPBF Field Effect Transistor Transistors FETs MOSFETs Single

IRFSL4310ZPBF Field Effect Transistor Transistors FETs MOSFETs Single

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
IRFSL4310ZPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 120A TO-262
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
HEXFET®
Introduction

IRFSL4310ZPBF Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6860pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Rds On (Max) @ Id, Vgs 6 mOhm @ 75A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRFSL4310ZPBF Packaging

Detection

IRFSL4310ZPBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFSL4310ZPBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFSL4310ZPBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFSL4310ZPBF Field Effect Transistor Transistors FETs MOSFETs Single

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