PSMN070-200P,127 Field Effect Transistor Transistors FETs MOSFETs Single
Specifications
Part Number:
PSMN070-200P,127
Manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 200V 35A TO220AB
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
TrenchMOS™
Introduction
PSMN070-200P,127 Specifications
Part Status | Active |
---|---|
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4570pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 17A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
PSMN070-200P,127 Packaging
Detection
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Stock:
MOQ:
Negotiable