SIHB24N65E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
SIHB24N65E-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 650V 24A D2PAK
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction
SIHB24N65E-GE3 Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 122nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2740pF @ 100V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Rds On (Max) @ Id, Vgs | 145 mOhm @ 12A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SIHB24N65E-GE3 Packaging
Detection
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Stock:
MOQ:
Negotiable