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IRFPE30PBF Field Effect Transistor Transistors FETs MOSFETs Single

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
IRFPE30PBF
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 800V 4.1A TO-247AC
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction

IRFPE30PBF Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 125W (Tc)
Rds On (Max) @ Id, Vgs 3 Ohm @ 2.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRFPE30PBF Packaging

Detection

IRFPE30PBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFPE30PBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFPE30PBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFPE30PBF Field Effect Transistor Transistors FETs MOSFETs Single

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