SIHP12N50C-E3 Field Effect Transistor Transistors FETs MOSFETs Single
Specifications
Part Number:
SIHP12N50C-E3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 500V 12A TO-220AB
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction
SIHP12N50C-E3 Specifications
Part Status | Active |
---|---|
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1375pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 208W (Tc) |
Rds On (Max) @ Id, Vgs | 555 mOhm @ 4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | - |
Package / Case | TO-220-3 |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
SIHP12N50C-E3 Packaging
Detection
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Stock:
MOQ:
Negotiable