SIHA21N65EF-E3 Field Effect Transistor Transistors FETs MOSFETs Single
Specifications
Part Number:
SIHA21N65EF-E3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 650V 21A TO-220
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction
SIHA21N65EF-E3 Specifications
Part Status | Active |
---|---|
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 106nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2322pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 11A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 Full Pack |
Package / Case | TO-220-3 Full Pack |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
SIHA21N65EF-E3 Packaging
Detection
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Stock:
MOQ:
Negotiable