SIHG33N65E-GE3 Field Effect Transistor Transistors FETs MOSFETs Single
Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
SIHG33N65E-GE3
Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 650V 32.4A TO-247AC
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction
SIHG33N65E-GE3 Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 32.4A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 173nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4040pF @ 100V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Rds On (Max) @ Id, Vgs | 105 mOhm @ 16.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SIHG33N65E-GE3 Packaging
Detection
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Stock:
MOQ:
Negotiable