TK25N60X,S1F Field Effect Transistor Transistors FETs MOSFETs Single
Specifications
Part Number:
TK25N60X,S1F
Manufacturer:
Toshiba Semiconductor And Storage
Description:
MOSFET N-CH 600V 25A TO-247
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
DTMOSIV-H
Introduction
TK25N60X,S1F Specifications
Part Status | Active |
---|---|
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1.2mA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 180W (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 7.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
TK25N60X,S1F Packaging
Detection
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Stock:
MOQ:
Negotiable