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TPH3212PS Field Effect Transistor Transistors FETs MOSFETs Single

Category:
Field Effect Transistor
Price:
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Specifications
Part Number:
TPH3212PS
Manufacturer:
Transphorm
Description:
CASCODE GAN FET 650V 28A TO220
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction

TPH3212PS Specifications

Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id 2.6V @ 400uA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 400V
Vgs (Max) -
FET Feature -
Power Dissipation (Max) 104W (Tc)
Rds On (Max) @ Id, Vgs 72 mOhm @ 17A, 8V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

TPH3212PS Packaging

Detection

TPH3212PS Field Effect Transistor Transistors FETs MOSFETs SingleTPH3212PS Field Effect Transistor Transistors FETs MOSFETs SingleTPH3212PS Field Effect Transistor Transistors FETs MOSFETs SingleTPH3212PS Field Effect Transistor Transistors FETs MOSFETs Single

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