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TPH3208LDG Field Effect Transistor Transistors FETs MOSFETs Single

Category:
Field Effect Transistor
Price:
Negotiable
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Specifications
Part Number:
TPH3208LDG
Manufacturer:
Transphorm
Description:
CASCODE GAN FET 650V 20A PQFN88
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction

TPH3208LDG Specifications

Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 8V
Vgs(th) (Max) @ Id 2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V
Vgs (Max) ±18V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Rds On (Max) @ Id, Vgs 130 mOhm @ 13A, 8V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PQFN (8x8)
Package / Case 3-PowerDFN
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

TPH3208LDG Packaging

Detection

TPH3208LDG Field Effect Transistor Transistors FETs MOSFETs SingleTPH3208LDG Field Effect Transistor Transistors FETs MOSFETs SingleTPH3208LDG Field Effect Transistor Transistors FETs MOSFETs SingleTPH3208LDG Field Effect Transistor Transistors FETs MOSFETs Single

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