Send Message
Home > Products > Field Effect Transistor > TPH3206LDGB Field Effect Transistor Transistors FETs MOSFETs Single

TPH3206LDGB Field Effect Transistor Transistors FETs MOSFETs Single

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
TPH3206LDGB
Manufacturer:
Transphorm
Description:
CASCODE GAN FET 600V 17A PQFN88
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction

TPH3206LDGB Specifications

Part Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 8V
Vgs(th) (Max) @ Id 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 480V
Vgs (Max) ±18V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 8V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PQFN (8x8)
Package / Case 3-PowerDFN
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

TPH3206LDGB Packaging

Detection

TPH3206LDGB Field Effect Transistor Transistors FETs MOSFETs SingleTPH3206LDGB Field Effect Transistor Transistors FETs MOSFETs SingleTPH3206LDGB Field Effect Transistor Transistors FETs MOSFETs SingleTPH3206LDGB Field Effect Transistor Transistors FETs MOSFETs Single

Send RFQ
Stock:
MOQ:
Negotiable