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SCT3120ALGC11 Field Effect Transistor Transistors FETs MOSFETs Single

Category:
Field Effect Transistor
Price:
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Specifications
Part Number:
SCT3120ALGC11
Manufacturer:
Rohm Semiconductor
Description:
MOSFET NCH 650V 21A TO247N
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction

SCT3120ALGC11 Specifications

Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 18V
Vgs(th) (Max) @ Id 5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V
Vgs (Max) +22V, -4V
FET Feature -
Power Dissipation (Max) 103W (Tc)
Rds On (Max) @ Id, Vgs 156 mOhm @ 6.7A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

SCT3120ALGC11 Packaging

Detection

SCT3120ALGC11 Field Effect Transistor Transistors FETs MOSFETs SingleSCT3120ALGC11 Field Effect Transistor Transistors FETs MOSFETs SingleSCT3120ALGC11 Field Effect Transistor Transistors FETs MOSFETs SingleSCT3120ALGC11 Field Effect Transistor Transistors FETs MOSFETs Single

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