SCT3120ALGC11 Field Effect Transistor Transistors FETs MOSFETs Single
Specifications
Part Number:
SCT3120ALGC11
Manufacturer:
Rohm Semiconductor
Description:
MOSFET NCH 650V 21A TO247N
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Introduction
SCT3120ALGC11 Specifications
Part Status | Active |
---|---|
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) | 18V |
Vgs(th) (Max) @ Id | 5.6V @ 3.33mA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 500V |
Vgs (Max) | +22V, -4V |
FET Feature | - |
Power Dissipation (Max) | 103W (Tc) |
Rds On (Max) @ Id, Vgs | 156 mOhm @ 6.7A, 18V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247N |
Package / Case | TO-247-3 |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
SCT3120ALGC11 Packaging
Detection
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Stock:
MOQ:
Negotiable