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Home > products > Field Effect Transistor > IRFHS8342TRPBF Field Effect Transistor Transistors FETs MOSFETs Single

IRFHS8342TRPBF Field Effect Transistor Transistors FETs MOSFETs Single

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
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Specifications
Part Number:
IRFHS8342TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 8.8A PQFN
Category:
Transistors - FETs, MOSFETs - Single
Family:
Transistors - FETs, MOSFETs - Single
Series:
HEXFET®
Introduction

IRFHS8342TRPBF Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 2.1W (Ta)
Rds On (Max) @ Id, Vgs 16 mOhm @ 8.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PQFN
Package / Case 8-PowerVDFN
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRFHS8342TRPBF Packaging

Detection

IRFHS8342TRPBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFHS8342TRPBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFHS8342TRPBF Field Effect Transistor Transistors FETs MOSFETs SingleIRFHS8342TRPBF Field Effect Transistor Transistors FETs MOSFETs Single

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