Send Message
Home > products > Field Effect Transistor > A2T23H300-24SR6 Field Effect Transistor Transistors FETs MOSFETs RF Chip

A2T23H300-24SR6 Field Effect Transistor Transistors FETs MOSFETs RF Chip

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Part Number:
A2T23H300-24SR6
Manufacturer:
NXP USA Inc.
Description:
IC TRANS RF LDMOS
Category:
Transistors - FETs, MOSFETs - RF
Family:
Transistors - FETs, MOSFETs - RF
Introduction

A2T23H300-24SR6 Specifications

Part Status Active
Transistor Type LDMOS (Dual)
Frequency 2.3GHz
Gain 14.9dB
Voltage - Test 28V
Current Rating -
Noise Figure -
Current - Test 750mA
Power - Output 66W
Voltage - Rated 65V
Package / Case NI-1230-4LS2L
Supplier Device Package NI-1230-4LS2L
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

A2T23H300-24SR6 Packaging

Detection

A2T23H300-24SR6 Field Effect Transistor Transistors FETs MOSFETs RF ChipA2T23H300-24SR6 Field Effect Transistor Transistors FETs MOSFETs RF ChipA2T23H300-24SR6 Field Effect Transistor Transistors FETs MOSFETs RF ChipA2T23H300-24SR6 Field Effect Transistor Transistors FETs MOSFETs RF Chip

Send RFQ
Stock:
MOQ:
Negotiable