Circuit Protection Power Mos Transistor Chip IPD060N03LGATMA1
Specifications
Product Model:
IPD060N03LGATMA1
Supplier Package:
TO-252-3
Brief Description:
MOSFET N-CH 30V 50A
Product Category:
FETs - Single
Application Areas:
Circuit Protection Chip
Date Of Manufacture:
Within A Year
High Light:
Power Mos Transistor Chip
,Circuit Protection Power Mos Transistor
Introduction
Field Effect Transistor Chip Discrete Semiconductors Circuit protection IPD060N03LGATMA1
Product range
- OptiMOSª3Power-Transistor,MOSFET N-CH 30V 50A TO-252
Basic data
Product Attribute | Attribute Value |
---|---|
Infineon | |
Product Category: | MOSFET |
RoHS: | Details |
Si | |
SMD/SMT | |
TO-252-3 | |
N-Channel | |
1 Channel | |
30 V | |
50 A | |
6 mOhms | |
- 20 V, + 20 V | |
2.2 V | |
14.4 nC | |
- 55 C | |
+ 175 C | |
56 W | |
Enhancement | |
OptiMOS | |
Reel | |
Cut Tape | |
Brand: | Infineon Technologies |
Configuration: | Single |
Fall Time: | 3 ns |
Forward Transconductance - Min: | 34 S |
Height: | 2.3 mm |
Length: | 6.5 mm |
Product Type: | MOSFET |
Rise Time: | 3 ns |
Series: | OptiMOS 3 |
2500 | |
Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 5 ns |
Width: | 6.22 mm |
Part # Aliases: | IPD060N03L G SP000680632 |
Unit Weight: | 0.011640 oz |
Application
- Switching applications
- BLDC Motors
- Three-Phase Permanent Magnet Synchronous Motors
- Inverters
- Half Bridge Drivers
- Robotic Control Systems
- Appliances
- Grid infrastructure
- EPOS • Home theate
- Distributed Power Systems
- Communications/Networking Infrastructure
DOWNLOAD DATASHEET
- IPD060N03LGATMA1 Field Effect Transistor Chip Discrete Semiconductors Circuit protection
Order Process
Add Parts to RFQ form | Submit RFQ | We reply within 24 hours |
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Chip Diagram
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Stock:
MOQ:
Negotiable