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STP110N8F6 Mosfet Discrete Semiconductor Devices For Switching Applications

Category:
Field Effect Transistor
Price:
Negotiable
Payment Method:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specifications
Product Model:
STP110N8F6
Supplier Package:
TO-220-3
Brief Description:
Power MOSFET
Transistor Polarity:
N-Channel
Application Areas:
Switching Applications
Date Of Manufacture:
Within A Year
High Light:

Discrete Semiconductor Devices

,

Mosfet Discrete

,

STP110N8F6

Introduction
Product Range 
  • IDiscrete Semiconductors Transistors MOSFET STMicroelectronics STP110N8F6 Switching applications
  • MOSFET N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6  T0-220
 App Characteristics
  •  Very low on-resistance
  •  Very low gate charge
  •  High avalanche ruggedness
  •  Low gate drive power loss
  • This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Basic Data
Product Attribute Attribute Value
STMicroelectronics
Product Category: MOSFET
RoHS: Details
Si
Through Hole
TO-220-3
N-Channel
1 Channel
80 V
110 A
6.5 mOhms
- 20 V, + 20 V
2.5 V
150 nC
- 55 C
+ 175 C
200 W
Enhancement
STripFET
Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 48 ns
Height: 15.75 mm
Length: 10.4 mm
Product Type: MOSFET
Rise Time: 61 ns
Series: STP110N8F6
1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel Power MOSFET
Typical Turn-Off Delay Time: 162 ns
Typical Turn-On Delay Time: 24 ns
Width: 4.6 mm
Unit Weight: 0.068784 oz
DOWNLOAD DATASHEET
  •  N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package
Application 
  • Switching applications
  • BLDC Motors
  • Three-Phase Permanent Magnet Synchronous Motors
  • Inverters
  • Half Bridge Drivers
  • Robotic Control Systems
  • Appliances
  •  Grid infrastructure
  •  EPOS • Home theate
  •  Distributed Power Systems
  •  Communications/Networking Infrastructure
Order Process

 

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Chip Diagram

 

STP110N8F6 Mosfet Discrete Semiconductor Devices For Switching ApplicationsSTP110N8F6 Mosfet Discrete Semiconductor Devices For Switching Applications

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