STI26NM60N Field Effect Transistor Transistors FETs MOSFETs Single
Категория:
Полевой транзистор
Цена:
Negotiable
Метод оплаты:
T/T, L/C, D/A, D/P, T/T, западное соединение, MoneyGram
Спецификации
Номер детали:
STI26NM60N
Изготовитель:
STMicroelectronics
Описание:
MOSFET N-CH 600V 20A I2PAK
Категория:
Транзисторы - FETs, MOSFETs - одиночные
Семья:
Транзисторы - FETs, MOSFETs - одиночные
Серия:
MDmesh™ II
Введение
STI26NM60N Specifications
| Part Status | Obsolete |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Rds On (Max) @ Id, Vgs | 165 mOhm @ 10A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
STI26NM60N Packaging
Detection
Отправьте RFQ
Запасы:
МОК:
Negotiable