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FDME1024NZT Field Effect Transistor Transistors FETs MOSFETs Arrays

Kategoria:
Tranzystor polowy
Cena £:
Negotiable
Metoda płatności:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specyfikacje
Numer części:
FDME1024NZT
Producent:
Fairchild/ON Semiconductor
Opis:
MOSFET 2N-CH 20V 3.8A 6-MICROFET
Kategoria:
Tranzystory - FET, MOSFET - Macierze
Rodzina:
Tranzystory - FET, MOSFET - Macierze
Seria:
PowerTrench®
Wprowadzenie

FDME1024NZT Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.8A
Rds On (Max) @ Id, Vgs 66 mOhm @ 3.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Power - Max 600mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Supplier Device Package 6-MicroFET (1.6x1.6)
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

FDME1024NZT Packaging

Detection

FDME1024NZT Field Effect Transistor Transistors FETs MOSFETs ArraysFDME1024NZT Field Effect Transistor Transistors FETs MOSFETs ArraysFDME1024NZT Field Effect Transistor Transistors FETs MOSFETs ArraysFDME1024NZT Field Effect Transistor Transistors FETs MOSFETs Arrays

Wyślij zapytanie ofertowe
Magazyn:
MOQ:
Negotiable