PSMN1R2-30YLDX Field Effect Transistor Transistors FETs MOSFETs Single
Kategoria:
Tranzystor polowy
Cena £:
Negotiable
Metoda płatności:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specyfikacje
Numer części:
PSMN1R2-30YLDX
Producent:
Nexperia USA Inc.
Opis:
MOSFET N-CH 30V 100A LFPAK
Kategoria:
Tranzystory - FET, MOSFET - Pojedyncze
Rodzina:
Tranzystory - FET, MOSFET - Pojedyncze
Wprowadzenie
PSMN1R2-30YLDX Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 68nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4616pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 194W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.24 mOhm @ 25A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Package / Case | SC-100, SOT-669 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
PSMN1R2-30YLDX Packaging
Detection
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Magazyn:
MOQ:
Negotiable