FDMB3800N Field Effect Transistor Transistors FETs MOSFETs Arrays
Categoria:
Transistor ad effetto di campo
Prezzo:
Negotiable
Metodo di pagamento:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specificità
Numero del pezzo:
FDMB3800N
Produttore:
Semiconduttore di Fairchild/ON
Descrizione:
MOSFET 2N-CH 30V 4.8A MICROFET
Categoria:
Transistor - FETs, MOSFETs - matrici
Famiglia:
Transistor - FETs, MOSFETs - matrici
Serie:
PowerTrench®
Introduzione
FDMB3800N Specifications
| Part Status | Active |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 4.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 465pF @ 15V |
| Power - Max | 750mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-MLP, MicroFET (3x1.9) |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
FDMB3800N Packaging
Detection
Invii il RFQ
Stoccaggio:
MOQ:
Negotiable