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PSMN013-100BS,118 Field Effect Transistor Transistors FETs MOSFETs Single

Categoria:
Transistor ad effetto di campo
Prezzo:
Negotiable
Metodo di pagamento:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specificità
Numero del pezzo:
PSMN013-100BS, 118
Produttore:
Nexperia USA Inc.
Descrizione:
MOSFET N-CH 100V 68A D2PAK
Categoria:
Transistor - FETs, MOSFETs - singoli
Famiglia:
Transistor - FETs, MOSFETs - singoli
Introduzione

PSMN013-100BS,118 Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 68A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3195pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 170W (Tc)
Rds On (Max) @ Id, Vgs 13.9 mOhm @ 15A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

PSMN013-100BS,118 Packaging

Detection

PSMN013-100BS,118 Field Effect Transistor Transistors FETs MOSFETs SinglePSMN013-100BS,118 Field Effect Transistor Transistors FETs MOSFETs SinglePSMN013-100BS,118 Field Effect Transistor Transistors FETs MOSFETs SinglePSMN013-100BS,118 Field Effect Transistor Transistors FETs MOSFETs Single

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Stoccaggio:
MOQ:
Negotiable