STP12N65M5 Field Effect Transistor Transistors FETs MOSFETs Single
Categoria:
Transistor ad effetto di campo
Prezzo:
Negotiable
Metodo di pagamento:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specificità
Numero del pezzo:
STP12N65M5
Produttore:
STMicroelectronics
Descrizione:
MOSFET N-CH 650V 8.5A TO-220
Categoria:
Transistor - FETs, MOSFETs - singoli
Famiglia:
Transistor - FETs, MOSFETs - singoli
Serie:
MDmesh™ V
Introduzione
STP12N65M5 Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 100V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Rds On (Max) @ Id, Vgs | 430 mOhm @ 4.3A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
STP12N65M5 Packaging
Detection
Invii il RFQ
Stoccaggio:
MOQ:
Negotiable