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Casa. > Products > Transistor ad effetto di campo > MRF6V3090NBR5 Field Effect Transistor Transistors FETs MOSFETs RF Chip

MRF6V3090NBR5 Field Effect Transistor Transistors FETs MOSFETs RF Chip

Categoria:
Transistor ad effetto di campo
Prezzo:
Negotiable
Metodo di pagamento:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Specificità
Numero del pezzo:
MRF6V3090NBR5
Produttore:
NXP USA Inc.
Descrizione:
FET RF 110V 860MHZ TO272-4
Categoria:
Transistor - FETs, MOSFETs - rf
Famiglia:
Transistor - FETs, MOSFETs - rf
Introduzione

MRF6V3090NBR5 Specifications

Part Status Not For New Designs
Transistor Type LDMOS
Frequency 860MHz
Gain 22dB
Voltage - Test 50V
Current Rating -
Noise Figure -
Current - Test 350mA
Power - Output 18W
Voltage - Rated 110V
Package / Case TO-272BB
Supplier Device Package TO-272 WB-4
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

MRF6V3090NBR5 Packaging

Detection

MRF6V3090NBR5 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRF6V3090NBR5 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRF6V3090NBR5 Field Effect Transistor Transistors FETs MOSFETs RF ChipMRF6V3090NBR5 Field Effect Transistor Transistors FETs MOSFETs RF Chip

Invii il RFQ
Stoccaggio:
MOQ:
Negotiable