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BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays

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BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays

BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays
BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays

Gambar besar :  BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays

Detail produk:
Tempat asal: Asli
Syarat-syarat pembayaran & pengiriman:
Kuantitas min Order: bisa dinegosiasikan
Harga: Negotiable
Waktu pengiriman: bisa dinegosiasikan
Syarat-syarat pembayaran: T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Menyediakan kemampuan: 100000

BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays

Deskripsi
Nomor Bagian: BSM180D12P2C101 Pabrikan: Semikonduktor Rohm
Keterangan: MODUL MOSFET 2N-CH 1200V 180A kategori: Transistor - FET, MOSFET - Array
Keluarga: Transistor - FET, MOSFET - Array

BSM180D12P2C101 Specifications

Part Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Standard
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 180A
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id 4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V
Power - Max 1130W
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type -
Package / Case Module
Supplier Device Package Module
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

BSM180D12P2C101 Packaging

Detection

BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays 0BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays 1BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays 2BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays 3

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