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NTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

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NTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

NTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs Arrays
NTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Gambar besar :  NTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Detail produk:
Tempat asal: Asli
Syarat-syarat pembayaran & pengiriman:
Kuantitas min Order: bisa dinegosiasikan
Harga: Negotiable
Waktu pengiriman: bisa dinegosiasikan
Syarat-syarat pembayaran: T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Menyediakan kemampuan: 100000

NTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Deskripsi
Nomor Bagian: NTJD1155LT1G Pabrikan: PADA Semikonduktor
Keterangan: MOSFET N/P-CH 8V 1.3A SOT-363 kategori: Transistor - FET, MOSFET - Array
Keluarga: Transistor - FET, MOSFET - Array

NTJD1155LT1G Specifications

Part Status Active
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 1.3A
Rds On (Max) @ Id, Vgs 175 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 400mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTJD1155LT1G Packaging

Detection

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KZ TECHNOLOGY (HONGKONG) LIMITED

Kontak Person: Darek

Tel: +8615017926135

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