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NTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

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NTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

NTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays
NTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Gambar besar :  NTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Detail produk:
Tempat asal: Asli
Syarat-syarat pembayaran & pengiriman:
Kuantitas min Order: bisa dinegosiasikan
Harga: Negotiable
Waktu pengiriman: bisa dinegosiasikan
Syarat-syarat pembayaran: T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Menyediakan kemampuan: 100000

NTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Deskripsi
Nomor Bagian: NTZD3155CT1G Pabrikan: PADA Semikonduktor
Keterangan: MOSFET N/P-CH 20V SOT-563 kategori: Transistor - FET, MOSFET - Array
Keluarga: Transistor - FET, MOSFET - Array

NTZD3155CT1G Specifications

Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 540mA, 430mA
Rds On (Max) @ Id, Vgs 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTZD3155CT1G Packaging

Detection

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