SIZ910DT-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays
Kategorie:
Feldeffekttransistor
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
SIZ910DT-T1-GE3
Hersteller:
Vishay Siliconix
Beschreibung:
MOSFET 2N-CH 30V 40A POWERPAIR
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Reihe:
TrenchFET®
Einleitung
SIZ910DT-T1-GE3 Specifications
| Part Status | Active |
|---|---|
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 40A |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V |
| Power - Max | 48W, 100W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair® |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SIZ910DT-T1-GE3 Packaging
Detection
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Lagerbestand:
MOQ:
Negotiable