BSM180D12P2C101 Field Effect Transistor Transistors FETs MOSFETs Arrays
Kategorie:
Feldeffekttransistor
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
BSM180D12P2C101
Hersteller:
Rohm-Halbleiter
Beschreibung:
MODUL MOSFET 2N-CH 1200V 180A
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Einleitung
BSM180D12P2C101 Specifications
| Part Status | Active |
|---|---|
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 180A |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 4V @ 35.2mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 23000pF @ 10V |
| Power - Max | 1130W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | - |
| Package / Case | Module |
| Supplier Device Package | Module |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
BSM180D12P2C101 Packaging
Detection
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Lagerbestand:
MOQ:
Negotiable