SI1016CX-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays
Kategorie:
Feldeffekttransistor
Preis:
verhandelbar
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
SI1016CX-T1-GE3
Hersteller:
Vishay Siliconix
Beschreibung:
MOSFET N/P-CH 20V SC89-6
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Reihe:
TrenchFET®
Einleitung
SI1016CX-T1-GE3 Specifications
| Part Status | Active |
|---|---|
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | 396 mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 10V |
| Power - Max | 220mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SC-89-6 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SI1016CX-T1-GE3 Packaging
Detection
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Lagerbestand:
MOQ:
Negotiable