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NTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

Kategorie:
Feldeffekttransistor
Preis:
verhandelbar
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
NTZD3155CT1G
Hersteller:
AUF Halbleiter
Beschreibung:
MOSFET N/P-CH 20V SOT-563
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Einleitung

NTZD3155CT1G Specifications

Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 540mA, 430mA
Rds On (Max) @ Id, Vgs 550 mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

NTZD3155CT1G Packaging

Detection

NTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs ArraysNTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays

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Lagerbestand:
MOQ:
Negotiable