NTZD3155CT1G Field Effect Transistor Transistors FETs MOSFETs Arrays
Spezifikationen
Teilnummer:
NTZD3155CT1G
Hersteller:
AUF Halbleiter
Beschreibung:
MOSFET N/P-CH 20V SOT-563
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Einleitung
NTZD3155CT1G Specifications
Part Status | Active |
---|---|
FET Type | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 540mA, 430mA |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 540mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 16V |
Power - Max | 250mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
NTZD3155CT1G Packaging
Detection
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Lagerbestand:
MOQ:
Negotiable