GT50J121(Q) IGBT Power Module Transistors IGBTs Single
Kategorie:
IGBT-Leistungsmodul
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
GT50J121 (Q)
Hersteller:
Toshiba-Halbleiter und -speicher
Beschreibung:
IGBT 600V 50A 240W TO3P LH
Kategorie:
Transistoren - IGBTs - einzeln
Familie:
Transistoren - IGBTs - einzeln
Einleitung
GT50J121(Q) Specifications
| Part Status | Obsolete |
|---|---|
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 50A |
| Current - Collector Pulsed (Icm) | 100A |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 50A |
| Power - Max | 240W |
| Switching Energy | 1.3mJ (on), 1.34mJ (off) |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | 90ns/300ns |
| Test Condition | 300V, 50A, 13 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Supplier Device Package | TO-3P(LH) |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
GT50J121(Q) Packaging
Detection
Senden Sie RFQ
Lagerbestand:
MOQ:
Negotiable