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SQJ422EP-T1_GE3 Field Effect Transistor Transistors FETs MOSFETs Single

Kategorie:
Feldeffekttransistor
Preis:
verhandelbar
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
SQJ422EP-T1_GE3
Hersteller:
Vishay Siliconix
Beschreibung:
MOSFET N-CH 40V 75A PPAK SO-8
Kategorie:
Transistoren - FETs, MOSFETs - einzeln
Familie:
Transistoren - FETs, MOSFETs - einzeln
Reihe:
Automobil, AEC-Q101, TrenchFET®
Einleitung

SQJ422EP-T1_GE3 Specifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 74A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4660pF @ 20V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Rds On (Max) @ Id, Vgs 3.4 mOhm @ 18A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

SQJ422EP-T1_GE3 Packaging

Detection

SQJ422EP-T1_GE3 Field Effect Transistor Transistors FETs MOSFETs SingleSQJ422EP-T1_GE3 Field Effect Transistor Transistors FETs MOSFETs SingleSQJ422EP-T1_GE3 Field Effect Transistor Transistors FETs MOSFETs SingleSQJ422EP-T1_GE3 Field Effect Transistor Transistors FETs MOSFETs Single

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MOQ:
Negotiable