STP7NM50N Field Effect Transistor Transistors FETs MOSFETs Single
Kategorie:
Feldeffekttransistor
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
STP7NM50N
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N-CH 500V 5A TO-220
Kategorie:
Transistoren - FETs, MOSFETs - einzeln
Familie:
Transistoren - FETs, MOSFETs - einzeln
Reihe:
MDmesh™ II
Einleitung
STP7NM50N Specifications
| Part Status | Obsolete |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 50V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Rds On (Max) @ Id, Vgs | 780 mOhm @ 2.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
STP7NM50N Packaging
Detection
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Lagerbestand:
MOQ:
Negotiable