TPN1R603PL,L1Q Field Effect Transistor Transistors FETs MOSFETs Single
Kategorie:
Feldeffekttransistor
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
TPN1R603PL, L1Q
Hersteller:
Toshiba-Halbleiter und -speicher
Beschreibung:
MOSFET-TRANSISTOR ENERGIE X35 PB-F
Kategorie:
Transistoren - FETs, MOSFETs - einzeln
Familie:
Transistoren - FETs, MOSFETs - einzeln
Reihe:
U-MOSIX-H
Einleitung
TPN1R603PL,L1Q Specifications
| Part Status | Active |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 10V @ 10µA |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2 mOhm @ 80A, 10V |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance |
| Package / Case | 8-PowerVDFN |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
TPN1R603PL,L1Q Packaging
Detection
Senden Sie RFQ
Lagerbestand:
MOQ:
Negotiable