SI7922DN-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Arrays
Catégorie:
Transistor à effet de champ
Prix:
Negotiable
Méthode de paiement:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Les spécifications
Numéro de la pièce:
SI7922DN-T1-GE3
Fabricant:
Vishay Siliconix
Description:
Transistor MOSFET 2N-CH 100V 1.8A 1212-8
Catégorie:
Transistors - FETs, transistors MOSFET - rangées
Famille:
Transistors - FETs, transistors MOSFET - rangées
Série:
TrenchFET®
Introduction au projet
SI7922DN-T1-GE3 Specifications
| Part Status | Active |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A |
| Rds On (Max) @ Id, Vgs | 195 mOhm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.3W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
SI7922DN-T1-GE3 Packaging
Detection
Envoyez le RFQ
Le stock:
Nombre de pièces:
Negotiable